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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB778 DESCRIPTION With TO-3PML package Complement to type 2SD998 APPLICATIONS High power amplifier applications Recommended for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC MAX -120 -120 -5 -10 -1.0 UNIT V V V A A W ae ae TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-5A ;IB=-0.5A IC=-5A;VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V IE=0;f=1MHz;VCB=-10V 55 10 280 MIN -120 TYP. 2SB778 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT COB MAX UNIT V -2.5 -1.5 -10 -10 160 |I |I V V A A MHz pF hFE Classifications R 55-110 O 80-160 HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB778 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB778 SEM GE HAN INC OND IC TOR UC 4 |
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